Photovoltaic Performance of HWCVD Deposited μc-Si:H Solar Cells Using Graded Hydrogen Dilution Window-Layer

被引:1
作者
Chiou, Uio-Pu [1 ]
Shieh, Jia-Min [2 ,3 ,4 ]
Pan, Fu-Ming [1 ]
Huang, Wen-Hsien [1 ,2 ]
机构
[1] Natl Chiao Tung Univ, Dept Mat & Engn, Hsinchu 30010, Taiwan
[2] Natl Nano Device Labs, Hsinchu 30078, Taiwan
[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[4] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
关键词
chemical vapour deposition; elemental semiconductors; hydrogen; hydrogenation; photovoltaic effects; semiconductor thin films; silicon; solar cells; CHEMICAL-VAPOR-DEPOSITION; H THIN-FILMS; MICROCRYSTALLINE SILICON; NANOCRYSTALLINE SILICON; TEMPERATURE; PHOSPHORUS; GLASS; CVD;
D O I
10.1149/1.3622290
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The study prepared thin film solar cells using hydrogenated microcrystalline silicon (mu c-Si:H) by hot-wire chemical vapor deposition (HWCVD). Hydrogen dilution profiling was used to deposit the boron-doped p-layer on the SnO(2):F substrate. The mu c-Si:H solar cell with triple hydrogen dilution grades in the p-layer has a high photoconversion efficiency of 4.5% as a result of the improvement in the electrical and the antireflection properties of the cell. The short circuit current (J(sc)) and the open circuit voltage (V(oc)) of the solar cell are 19.7 mA/cm(2) and 450 mV, respectively. The graded hydrogen concentration in the p-layer improves the crystallinity and the antireflection of the absorbing layer (intrinsic layer), thereby enhancing the J(sc). The high V(oc) is ascribed to that a high hydrogen dilution ratio may enhance boron doping in the p-layer leading to the improvement of the V(oc). (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3622290] All rights reserved.
引用
收藏
页码:H1017 / H1020
页数:4
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