Controlled Electrochemical Formation of GexSbyTez using Atomic Layer Deposition (ALD)

被引：21

作者：

Liang, Xuehai ^{[1
]}

Jayaraju, Nagarajan ^{[1
]}

Thambidurai, Chandru ^{[1
]}

Zhang, Qinghui ^{[1
]}

Stickney, John L. ^{[1
]}

机构：

[1] Univ Georgia, Dept Chem, Athens, GA 30602 USA

来源：

CHEMISTRY OF MATERIALS | 2011年 / 23卷 / 07期

基金：

美国国家科学基金会;

关键词：

ALD; E-ALD; phase change memory; UPD; electrodeposition; PHASE-CHANGE MATERIALS; THIN-FILMS; CATHODIC DEPOSITION; SB2TE3; NANOFILMS; ELECTRODEPOSITION; CDTE; TE; SB; EC; SUPERLATTICES;

D O I：

10.1021/cm102672j

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper describes a systematic study of the deposition of a phase change material, GexSbyTez, using electrochemical atomic layer deposition (E-ALD). Cyclic voltammetry in aqueous solutions was used to investigate the deposition of atomic layers of Ge, Sb and Te. That data was used to develop initial E-ALD cyde conditions to form the binaries: SbxTey and GexTey. Films of the ternary material GexSbyTez, were then deposited with a wide range of compositions by alternating the binary cycles in various combinations. Conformal nanofilms were formed that exhibited good crystallinity.

引用

收藏

页码：1742 / 1752

页数：11

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