Investigation of the initial growth of cubic-GaN using an AlGaAs buffer layer grown on GaAs (100) by molecular beam epitaxy

An investigation of the initial growth mechanism of cubic GaN film during the nitridation of an AlGaAs buffer layer and the initial growth stage of an epilayer by RF-plasma assisted molecular beam epitaxy was carried out using in situ reflection high energy electron diffraction (RHEED), and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grew on (1 1 1) facet during nitridation of AlGaAs buffer layer, but a highly pure cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer. (C) 2001 Elsevier Science B.V. All rights reserved.