Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation

被引：22

作者：

Cui Jin-Ming ^{[1
]}

Chen Xiang-Dong ^{[1
]}

Fan Le-Le ^{[2
]}

Gong Zhao-Jun ^{[1
]}

Zou Chong-Wen ^{[2
]}

Sun Fang-Wen ^{[1
]}

Han Zheng-Fu ^{[1
]}

Guo Guang-Can ^{[1
]}

机构：

[1] Univ Sci & Technol China, Key Lab Quantum Informat, Hefei 230026, Peoples R China

[2] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2012年 / 29卷 / 03期

基金：

中国国家自然科学基金;

关键词：

PHOTON; SPINS;

D O I：

10.1088/0256-307X/29/3/036103

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Nitrogen-vacancy defect color centers are created in a high purity single crystal diamond by nitrogen-ion implantation. Both optical spectrum and optically detected magnetic resonance are measured for these artificial quantum emitters. Moreover, with a suitable mask, a lattice composed of nitrogen-vacancy centers is fabricated. Rabi oscillation driven by micro-waves is carried out to show the quality of the ion implantation and potential in quantum manipulation. Along with compatible standard lithography, such an implantation technique shows high potential in future to make structures with nitrogen-vacancy centers for diamond photonics and integrated photonic quantum chip.

引用

页数：4

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