Review of Ka-Band Power Amplifier

被引:6
作者
Wang, Zhong [1 ]
Hu, Shanwen [2 ]
Gu, Ling [2 ]
Lin, Lujun [1 ]
机构
[1] Zhejiang A&F Univ, Jiyang Coll, Shaoxing 312000, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Nanjing 210023, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
power amplifier; Ka band; satellite communication; GHZ; DESIGN; PAE; 5G; INTEGRATION; MODULE; FUTURE; MMICS; KU;
D O I
10.3390/electronics11060942
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
With the increase in the demand for high-speed transmission communication, satellite communication is developing rapidly. Because of the bandwidth capacity, the K/Ka band is considered the mainstream frequency band of satellite communication. The performance of a power amplifier (PA) directly affects the power of the transmitter, so the application of a power amplifier in Ka-band satellite communication is very important. A review of the state-of-the-art PA in the Ka band is presented in this article. The structure of the PA introduced includes common source, cascode, stacked field-effect transistor (FET), power combining, and Doherty PA, highlighting the advantages and disadvantages. The main solid-state technologies are outlined, including Si, SiGe, GaAs, and GaN, emphasizing Si complementary metal-oxide-semiconductor (CMOS) due to low price and high integration.
引用
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页数:26
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