Solid C60 layer growth on AlN (0001) surface for C60FET structure by MBE

被引：3

作者：

Yokoyama, D ^{[1
]}

Nojiri, H ^{[1
]}

Yamamoto, A ^{[1
]}

Hashimoto, A ^{[1
]}

机构：

[1] Univ Fukui, Dept Elect & Elect Engn, Fukui 9108507, Japan

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303352

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

One of the most important problems is how to form an excellent interface between the insulator and the C-60 layers in the C-60 field-effect doping technique. In this paper, we propose a new structure of the C-60 field-effect transistor which consists of an epitaxial AlN layer as the insulator and a C-60 epitaxial layer grown on an AlN (0001) surface. We have mainly investigated solid C-60 growth on the AlN (0001) surface by the MBE technique in the present work. C-60 grains with face centred cubic structure have been obtained on a smooth AlN surface. Four types of the C-60 grains were obtained, that is, the 0degrees orientation and its twin grains and the 30degrees orientation and its twin grains. We have found that the 0degrees orientation grains only can be obtained by controlling the growth temperature. The results strongly indicate that an excellent interface between the AlN insulator and the C-60 layer can be formed for device applications. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2404 / 2407

页数：4

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