Solid C60 layer growth on AlN (0001) surface for C60FET structure by MBE

One of the most important problems is how to form an excellent interface between the insulator and the C-60 layers in the C-60 field-effect doping technique. In this paper, we propose a new structure of the C-60 field-effect transistor which consists of an epitaxial AlN layer as the insulator and a C-60 epitaxial layer grown on an AlN (0001) surface. We have mainly investigated solid C-60 growth on the AlN (0001) surface by the MBE technique in the present work. C-60 grains with face centred cubic structure have been obtained on a smooth AlN surface. Four types of the C-60 grains were obtained, that is, the 0degrees orientation and its twin grains and the 30degrees orientation and its twin grains. We have found that the 0degrees orientation grains only can be obtained by controlling the growth temperature. The results strongly indicate that an excellent interface between the AlN insulator and the C-60 layer can be formed for device applications. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.