Influence of Substrate Surface Chemistry on the Performance of Top-Gate Organic Thin-Film Transistors

被引：52

作者：

Boudinet, Damien ^{[1
]}

Benwadih, Mohammed ^{[1
]}

Altazin, Stephane ^{[1
]}

Verilhac, Jean-Marie ^{[1
]}

De Vito, Eric ^{[1
]}

Serbutoviez, Christophe ^{[1
]}

Horowitz, Gilles ^{[2
]}

Facchetti, Antonio ^{[3
]}

机构：

[1] CEA LITEN LCI, F-38054 Grenoble, France

[2] Univ Paris Diderot, CNRS, ITODYS, UMR 7086, F-75205 Paris 13, France

[3] Polyera Corp, Skokie, IL 60077 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2011年 / 133卷 / 26期

关键词：

FIELD-EFFECT TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; ELECTROSTATIC MODEL; DIPOLE-MOMENTS; SPECTROSCOPY; ELECTRONICS; DIELECTRICS; INSULATORS; TRANSPORT; ENERGIES;

D O I：

10.1021/ja2010576

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organic thin-film transistor (OTFT) performance depends on the chemical characteristics of the interface between functional semiconductor/dielectric/conductor materials. Here we report for the first time that OTFT response in top-gate architectures strongly depends on the substrate chemical functionalization. Depending on the nature of the substrate surface, dramatic variations and opposite trends of the TFT threshold voltage (similar to +/- 50 V) and OFF current (10(5) x !) are observed for both p- and n-channel semiconductors. However, the field-effect mobility varies only marginally (similar to 2 x). Our results demonstrate that the substrate is not a mere passive mechanical support.

引用

页码：9968 / 9971

页数：4

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