UV-irradiated sol-gel spin coated AZO thin films: enhanced optoelectronic properties

被引：17

作者：

Khan, Md. Irfan ^{[1
]}

Neha, Tasratur Reaj ^{[1
]}

Billah, Md. Muktadir ^{[1
]}

机构：

[1] Bangladesh Univ Engn & Technol, Dept Mat & Met Engn, Dhaka 1000, Bangladesh

来源：

HELIYON | 2022年 / 8卷 / 01期

关键词：

Thin film; Sol-gel; Optoelectronic; Burstein-moss effect; UV irradiation; UV blocking; OPTICAL-PROPERTIES; SPRAY-PYROLYSIS; ZNO; TRANSPARENT; CONDUCTIVITY; ORIENTATION; TEMPERATURE; FIGURE; MERIT;

D O I：

10.1016/j.heliyon.2022.e08743

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Thin films of transparent conductive Al doped ZnO (AZO) thin films were produced via sol-gel spin coating route. Structural, optical, and electrical properties were explored for several dopant concentrations. Formation of crystalline AZO was verified by X-ray Diffraction (XRD) Analysis and structural analysis were carried out later from the XRD data. Highest band gap of 3.67 eV was found for 2 mol % AZO thin films. The average transmittance was found to be 84.19% in the visible spectra for the corresponding thin films. 2 mol% AZO also exhibited a minimum resistivity of 2.05 Omega-cm with a maximum value of figure of merit. Prolonged UV irradiation was applied to 2 mol % AZO thin films prior to annealing. It significantly modified the surface morphology of the film and provided shielding near UVA (315-378 nm) spectrum. This also enhanced the conductivity of the thin film by 3-fold compared to non-UV treated sample and decreased optical band gap significantly.

引用

页数：8

共 50 条

[1] Structural and Optical Properties of ZnO Thin Films Prepared by Molecular Precursor and Sol-Gel Methods [J].