A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency Reference for Wireless Sensor Networks

被引：22

作者：

Sebastiano, Fabio ^{[1
]}

Breems, Lucien J. ^{[1
]}

Makinwa, Kofi A. A. ^{[2
]}

Drago, Salvatore ^{[1
]}

Leenaerts, Domine M. W. ^{[1
]}

Nauta, Bram ^{[3
]}

机构：

[1] NXP Semicond, NL-5656 AE Eindhoven, Netherlands

[2] Delft Univ Technol, Elect Instrumentat Lab, Fac Elect Engn Comp Sci & Math, Delft, Netherlands

[3] Univ Twente, CTIT Res Inst, IC Design Grp, NL-7500 AE Enschede, Netherlands

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2011年 / 46卷 / 07期

关键词：

Charge carrier mobility; CMOS integrated circuits; crystal-less clock; frequency reference; low voltage; MOSFET; sigma-delta modulation; smart sensors; temperature compensation; temperature sensors; ultra-low power; wireless sensor networks; INACCURACY; 3-SIGMA;

D O I：

10.1109/JSSC.2011.2143630

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55 degrees C to 125 degrees C, the frequency spread of the complete reference is less than +/- 0.5% after a two-point trim and less than +/- 2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm(2) and draws 42.6 mu A from a 1.2-V supply at room temperature.

引用

页码：1544 / 1552

页数：9

共 10 条

[1] A Low Power, Frequency-to-Digital Converter CMOS Based Temperature Sensor in 65 nm Process
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[2] A 1.2-V 10-μW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From -70 °C to 125 °C
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[3] An Energy-Efficient Mobility-Based Cluster Head Selection for Lifetime Enhancement of Wireless Sensor Networks
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[6] A 5.6 ppm/°C Temperature Coefficient, 87-dB PSRR, Sub-1-V Voltage Reference in 65-nm CMOS Exploiting the Zero-Temperature-Coefficient Point
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[7] A 9-Bit Resistor-Based Highly Digital Temperature Sensor With a SAR-Quantization Embedded Differential Low-Pass Filter in 65-nm CMOS With a 2.5-μs Conversion Time
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[8] SleepWalker: A 25-MHz 0.4-V Sub-mm2 7-μW/MHz Microcontroller in 65-nm LP/GP CMOS for Low-Carbon Wireless Sensor Nodes
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[9] A 0.0088mm2 Resistor-Based Temperature Sensor Achieving 92fJ•K2 FoM in 65nm CMOS
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[10] A 9-bit Resistor-Based All -Digital Temperature Sensor with a SAR-Quantization Embedded Differential Low-Pass Filter in 65nm CMOS Consuming 57pJ with a 2.5μs Conversion Time
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