Nanopatterning of Fluorinated Graphene by Electron Beam Irradiation

被引：170

作者：

Withers, Freddie ^{[1
]}

Bointon, Thomas H. ^{[1
]}

Dubois, Marc ^{[2
]}

Russo, Saverio ^{[1
]}

Craciun, Monica F. ^{[1
]}

机构：

[1] Univ Exeter, CEMPS, Ctr Graphene Sci, Exeter EX4 4QL, Devon, England

[2] Clermont Univ, UBP, Lab Mat Inorgan, CNRS,UMR 6002, F-63177 Clermont Ferrand, France

来源：

NANO LETTERS | 2011年 / 11卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

Nanopatterning; fluorinated graphene; electron irradiation; electron transport; OXIDE; SEMICONDUCTORS; HYDROGENATION; TRANSISTORS;

D O I：

10.1021/nl2020697

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate the possibility to selectively reduce insulating fluorinated graphene to conducting and semiconducting graphene by electron beam irradiation. Electron-irradiated fluorinated graphene microstructures show 7 orders of magnitude decrease in resistivity (from 1 T Omega to 100 k Omega), whereas nanostructures show a transport gap in the source drain bias voltage. In this transport gap, electrons are localized, and charge transport is dominated by variable range hopping. Our findings demonstrate a step forward to all-graphene transparent and flexible electronics.

引用

收藏

页码：3912 / 3916

页数：5

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