GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy

被引：6

作者：

He Ji-Fang ^{[1
]}

Wang Hai-Li ^{[1
]}

Shang Xiang-Jun ^{[1
]}

Li Mi-Feng ^{[1
]}

Zhu Yan ^{[1
]}

Wang Li-Juan ^{[1
]}

Yu Ying ^{[1
]}

Ni Hai-Qiao ^{[1
]}

Xu Ying-Qiang ^{[1
]}

Niu Zhi-Chuan ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2011年 / 44卷 / 33期

基金：

中国国家自然科学基金;

关键词：

1.3; MU-M; STRAIN RELIEF; LASERS; SUBSTRATE; PHOTOLUMINESCENCE; DISLOCATIONS; OPERATION; RANGE;

D O I：

10.1088/0022-3727/44/33/335102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular beam epitaxy growth of GaAs-based long-wavelength metamorphic InAs/InGaAs quantum dots (QDs) is investigated. With optimized multi-step-graded InGaAs metamorphic buffer layers and growth conditions, room temperature 1.46 mu m emission from InAs/In0.15Ga0.85As QDs is realized, and broad-area laser diodes are fabricated with a very low etch pit defect density of less than 5.0 x 10(3) cm(-2). The lasers operate under pulsed operation mode at room temperature with a low threshold current density of 146.7A cm(-2).

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页数：5

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