Use of surface sensitive analysis techniques for the study of silicide processes in power transistors: Platinum silicide formation as an example

被引：0

作者：

Kraft, D ^{[1
]}

Ganitzer, P ^{[1
]}

Kohler-Redlich, P ^{[1
]}

Scheithauer, U ^{[1
]}

机构：

[1] Infineon Technol Austria AG, A-9500 Villach, Austria

来源：

2005 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop: Advancing Semiconductor Manufacturing Excellence | 2005年

关键词：

XPS; power semiconductors; platinum silicide process; surface analysis;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study demonstrates how to gain a fundamental understanding of semiconductor unit processes using surface sensitive analysis techniques. Silicide processes are presently widely-used in power transistor technology. Therefore, the platinum silicide fori-nation has been examined systematically. Besides this technological aspect it is also shown that X-ray induced Photoelectron Spectroscopy (XPS) in combination with other surface sensitive methods are powerful tools which can be adjuvant for industrial questions as well.

引用

页码：218 / 223

页数：6

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