Depth-dependent strain distribution in AlGaN-based deep ultraviolet light-emitting diodes using surface-plasmon-enhanced Raman spectroscopy

被引：2

作者：

Jung, Gunwoo ^{[1
]}

Kim, Kyuheon ^{[1
]}

Kim, Jaesun ^{[1
]}

Sung, Yujin ^{[1
]}

Kang, Jae-Sang ^{[1
]}

Moon, Youngboo ^{[2
]}

Lim, Seung-Young ^{[3
]}

Song, Jung-Hoon ^{[1
]}

机构：

[1] Kongju Natl Univ, Dept Phys, Gongju Si 32588, Chungnam, South Korea

[2] UJL INC, Siheung Si, Gyeonggi Do, South Korea

[3] Silicon Display, Yongin, Gyeonggi Do, South Korea

来源：

JOURNAL OF RAMAN SPECTROSCOPY | 2021年 / 52卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

DUV LED; metal nanoparticle; resonance; SERS; strain distribution; RESONANCE; STRESS; SUPERLATTICES; EMISSION; POWER; GAN;

D O I：

10.1002/jrs.6247

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

Ex situ depth-dependent strain distribution in AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) was investigated through surface-plasmon-enhanced Raman spectroscopy with an optimally truncated structure. In this study, the strain was selectively analyzed by an ex situ method as a function of the distance from the sapphire substrate followed by AlN relaxation layers. Experimental results for DUV LEDs with a complex structure showed that the strain was non-uniformly distributed with the thickness and that the compressive strain tended to gradually decrease when the AlGaN layer or the AlN relaxation layer was grown from the substrate. We quantitatively determined the subtle changes in the additional strain caused by the lattice mismatch between the underlying layers subjected to the residual compressive strain.

引用

页码：1860 / 1867

页数：8

共 36 条

[1] Strongly interacting plasmon nanoparticle pairs: From dipole-dipole interaction to conductively coupled regime [J].

Atay, T ;

Song, JH ;

Nurmikko, AV .

NANO LETTERS, 2004, 4 (09) :1627-1631

[2] Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates [J].

Bryan, Zachary ;

Bryan, Isaac ;

Mita, Seiji ;

Tweedie, James ;

Sitar, Zlatko ;

Collazo, Ramon .

APPLIED PHYSICS LETTERS, 2015, 106 (23)

[3] Surface-enhanced Raman scattering [J].

Campion, A ;

Kambhampati, P .

CHEMICAL SOCIETY REVIEWS, 1998, 27 (04) :241-250

[4] Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys -: art. no. 125203 [J].

Davydov, VY ;

Goncharuk, IN ;

Smirnov, AN ;

Nikolaev, AE ;

Lundin, WV ;

Usikov, AS ;

Klochikhin, AA ;

Aderhold, J ;

Graul, J ;

Semchinova, O ;

Harima, H .

PHYSICAL REVIEW B, 2002, 65 (12) :1-13

[5] AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency [J].

Dong, Peng ;

Yan, Jianchang ;

Zhang, Yun ;

Wang, Junxi ;

Zeng, Jianping ;

Geng, Chong ;

Cong, Peipei ;

Sun, Lili ;

Wei, Tongbo ;

Zhao, Lixia ;

Yan, Qingfeng ;

He, Chenguang ;

Qin, Zhixin ;

Li, Jinmin .

JOURNAL OF CRYSTAL GROWTH, 2014, 395 :9-13

[6] Strain effect on the optical polarization properties of c-plane Al0.26Ga0.74N/GaN superlattices [J].

Fan, Shunfei ;

Qin, Zhixin ;

He, Chenguang ;

Wang, Xinqiang ;

Shen, Bo ;

Zhang, Guoyi .

OPTICS EXPRESS, 2014, 22 (06) :6322-6328

[7] Raman study of Hi-Nicalon-fiber-reinforced celsian composites: II, residual stress in fibers [J].

Gouadec, G ;

Colomban, P ;

Bansal, NP .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2001, 84 (05) :1136-1142

[8] Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system [J].

He, Chenguang ;

Qin, Zhixin ;

Xu, Fujun ;

Zhang, Lisheng ;

Wang, Jiaming ;

Hou, Mengjun ;

Zhang, Shan ;

Wang, Xinqiang ;

Ge, Weikun ;

Shen, Bo .

SCIENTIFIC REPORTS, 2016, 6

[9] High-Power 365 nm UV LED Mercury Arc Lamp Replacement for Photochemistry and Chemical Photolithography [J].

Hoelz, K. ;

Lietard, J. ;

Somoza, M. M. .

ACS SUSTAINABLE CHEMISTRY & ENGINEERING, 2017, 5 (01) :828-834

[10]

Hong S.-K, 2009, OXIDE NITRIDE SEMICO, P344

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