Effect of Ta Buffer Layer on the Structural and Magnetoelectricity Characteristic of Ultrathin NiCo Films

被引:0
作者
Wang, Guo-song [1 ]
Zhang, Shan-shan [1 ]
Zhen, Ying [1 ]
Dong, Qiao-yan [1 ]
Jiang, Hong-wei [1 ]
机构
[1] Capital Normal Univ, Dept Phys, Beijing 100048, Peoples R China
来源
PROCEEDINGS OF THE 7TH NATIONAL CONFERENCE ON CHINESE FUNCTIONAL MATERIALS AND APPLICATIONS (2010), VOLS 1-3 | 2010年
关键词
NiCo film; anisotropic magnetoresistance; texture; magnetron; MAGNETIC-PROPERTIES; COERCIVITY;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
NiCo and Ta/NiCo films were grown on glass substrates with magnetron sputtering,and the effect of Ta buffer layer on the structural and magnetoelectricity chatacter of NiCo films with different thickness were studied. When the thickness of NiCo fims are thicker than 15nm,the distinctness fcc (111) peaks were found in the films with Ta buffer layer,but the (111) peaks can't be found in the films without Ta buffer layer by the x-ray diffraction (XRD). The atomic force microscopy (AFM) results indicate that the surface of NiCo films with Ta buffer layer are smoother than the NiCo films without Ta buffer layer. The vibrating sample magnetometer ( VSM) results show that the both NiCo films existed magnetic anisotropy The anisotropic magnetoresistance (AMR) of NiCo films can be improved by Ta buffer layer.
引用
收藏
页码:1479 / 1482
页数:4
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