Structural and optical properties of Ge nanocrystals obtained by hot ion implantation into SiO2 and further ion irradiation

被引：2

作者：

Bregolin, F. L. ^{[2
]}

Behar, M. ^{[2
]}

Sias, U. S. ^{[1
,2
]}

机构：

[1] Inst Fed Educ Ciencia & Tecnol Sul Rio Grandense, BR-96015370 Pelotas, RS, Brazil

[2] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

来源：

JOURNAL OF LUMINESCENCE | 2012年 / 132卷 / 06期

关键词：

Ge nanostructures; Photoluminescence; Hot implantation; Ion irradiation; Photoluminescence recovery; VISIBLE PHOTOLUMINESCENCE; ELECTROLUMINESCENCE; BLUE;

D O I：

10.1016/j.jlumin.2012.01.007

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this work, SiO2 layers containing Ge nanocrystals (NCs) obtained by the hot implantation approach were submitted to an ion irradiation process with different 2 MeV Si+ ion fluences. We have investigated the photoluminescence (PL) behavior and structural properties of the irradiated samples as well as the features of the PL and structural recovery after an additional thermal treatment. We have shown that even with the highest ion bombardment fluence employed (2 x 10(15) Si/cm(2)) there is a residual PL emission (12% from the original) and survival of some Ge NCs is still observed by transmission electron microscopy analysis. Even though the final PL and mean diameter of the nanoparticles under ion irradiation are independent of the implantation temperature or annealing time, the PL and structural recovery of the ion-bombarded samples have a memory effect. We have also observed that the lower the ion bombardment fluence, the less efficient is the PL recovery. We have explained such behavior based on current literature data. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：1339 / 1344

页数：6

共 13 条

[1] Amorphization of Ge and Si nanocrystals embedded in amorphous SiO2 by ion irradiation [J].

Backman, M. ;

Djurabekova, F. ;

Pakarinen, O. H. ;

Nordlund, K. ;

Araujo, L. L. ;

Ridgway, M. C. .

PHYSICAL REVIEW B, 2009, 80 (14)

[2] Photoluminescence induced from hot Ge implantation into SiO2 [J].

Bregolin, F. L. ;

Behar, M. ;

Sias, U. S. ;

Moreira, E. C. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 267 (8-9) :1321-1323

[3] Amorphization of Ge nanocrystals embedded in amorphous silica under ion irradiation [J].

Djurabekova, Flyura ;

Backman, Marie ;

Pakarinen, Olli H. ;

Nordlund, Kai ;

Araujo, Leandro L. ;

Ridgway, Mark C. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 267 (8-9) :1235-1238

[4] Cluster coarsening and luminescence emission intensity of Ge nanoclusters in SiO2 layers [J].

Lopes, JMJ ;

Zawislak, FC ;

Behar, M ;

Fichtner, PFP ;

Rebohle, L ;

Skorupa, W .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (09) :6059-6064

[5] Defect production and annealing in ion-irradiated Si nanocrystals -: art. no. 144109 [J].

Pacifici, D ;

Moreira, EC ;

Franzò, G ;

Martorino, V ;

Priolo, F ;

Iacona, F .

PHYSICAL REVIEW B, 2002, 65 (14) :1-13

[6] Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers [J].

Rebohle, L ;

vonBorany, J ;

Yankov, RA ;

Skorupa, W ;

Tyschenko, IE ;

Frob, H ;

Leo, K .

APPLIED PHYSICS LETTERS, 1997, 71 (19) :2809-2811

[7] Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements [J].

Rebohle, L ;

von Borany, J ;

Fröb, H ;

Skorupa, W .

APPLIED PHYSICS B-LASERS AND OPTICS, 2000, 71 (02) :131-151

[8] ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GE-IMPLANTED SI/SIO2/SI STRUCTURES [J].

SHCHEGLOV, KV ;

YANG, CM ;

VAHALA, KJ ;

ATWATER, HA .

APPLIED PHYSICS LETTERS, 1995, 66 (06) :745-747

[9] VISIBLE PHOTOLUMINESCENCE IN SI+-IMPLANTED SILICA GLASS [J].

SHIMIZUIWAYAMA, T ;

FUJITA, K ;

NAKAO, S ;

SAITOH, K ;

FUJITA, T ;

ITOH, N .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (12) :7779-7783

[10] Optical and structural properties of Si nanocrystals produced by Si hot implantation [J].

Sias, U. S. ;

Behar, M. ;

Boudinov, H. ;

Moreira, E. C. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (04)

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