First-principles Study of Electronic and Dielectric Properties of Polyoxymethylene

被引:2
作者
Sreepad, H. R. [1 ]
Hembram, K. P. S. S. [2 ]
Waghmare, Umesh V. [2 ]
机构
[1] Govt Coll Autonomous, Mandya 571401, Karnataka, India
[2] Jawaharlal Nehru Ctr Adv Sci Res, Bangalore 560064, Karnataka, India
来源
SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B | 2011年 / 1349卷
关键词
Polyoxymethylene; DFT; Dielectric constant; phonons; Electronic density of states;
D O I
10.1063/1.3606135
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The structure of orthorhombic Polyoxymethylene has been simulated using first-principles. Its structural parameters have been studied. Calculation of Electronic Density of States in the material shows that the material is an insulator with a band gap of 3.51 eV. Phonon frequencies and dielectric constant have been computed. Effect of change in volume of unit cell on the value of dielectric constant has been studied
引用
收藏
页码:871 / +
页数:2
相关论文
共 8 条
[1]  
David C. K., 2010, US Patent, Patent No. 7648653
[2]  
Forschirm A, 1996, POLYMERIC MAT ENCY
[3]   Computer graphics and graphical user interfaces as tools in simulations of matter at the atomic scale [J].
Kokalj, A .
COMPUTATIONAL MATERIALS SCIENCE, 2003, 28 (02) :155-168
[4]   HIGH-PRECISION SAMPLING FOR BRILLOUIN-ZONE INTEGRATION IN METALS [J].
METHFESSEL, M ;
PAXTON, AT .
PHYSICAL REVIEW B, 1989, 40 (06) :3616-3621
[5]   SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1977, 16 (04) :1746-1747
[6]   ITERATIVE MINIMIZATION TECHNIQUES FOR ABINITIO TOTAL-ENERGY CALCULATIONS - MOLECULAR-DYNAMICS AND CONJUGATE GRADIENTS [J].
PAYNE, MC ;
TETER, MP ;
ALLAN, DC ;
ARIAS, TA ;
JOANNOPOULOS, JD .
REVIEWS OF MODERN PHYSICS, 1992, 64 (04) :1045-1097
[7]   SELF-INTERACTION CORRECTION TO DENSITY-FUNCTIONAL APPROXIMATIONS FOR MANY-ELECTRON SYSTEMS [J].
PERDEW, JP ;
ZUNGER, A .
PHYSICAL REVIEW B, 1981, 23 (10) :5048-5079
[8]   SOFT SELF-CONSISTENT PSEUDOPOTENTIALS IN A GENERALIZED EIGENVALUE FORMALISM [J].
VANDERBILT, D .
PHYSICAL REVIEW B, 1990, 41 (11) :7892-7895