Effect of In3+ doping on electroluminescence from MgZnO:In3+/ZnO:Er3+/n-Si LEDs

被引：4
作者：
Huang, Miaoling [1 ]
Wang, Shenwei [1 ]
Yin, Xue [1 ]
Mu, Guangyao [1 ]
Wan, Guangmiao [1 ]
Duan, Xiaoxia [1 ]
Yi, Lixin [1 ]
机构：
[1] Beijing Jiaotong Univ, Inst Optoelect Technol, Minist Educ, Key Lab Luminescence & Opt Informat, Beijing 100044, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2017年 / 50卷 / 21期
基金：
中国国家自然科学基金;
关键词：
zinc oxide; rare earth; sputtering; thin film; electroluminescence; LIGHT-EMITTING DIODE; 1.54; MU-M; INFRARED ELECTROLUMINESCENCE; GREEN ELECTROLUMINESCENCE; THIN-FILMS; ZNO; MGXZN1-XO; EMISSION; ERBIUM; ALLOY;
D O I：
10.1088/1361-6463/aa6a75
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Rare earth (RE)-related electroluminescence (EL) devices have a wide range of applications in full-color display due to its spectrally pure emissions and insensitivity to the surrounding environment. Here we report a set of MgZnO:In3+/ZnO:Er3+/n-Si light-emitting diodes with different In concentrations prepared by a radio frequency magnetron sputtering method. The current-voltage characteristics and EL spectra are presented. With an increase in the In dopant concentration, the forward threshold voltage of the devices drops significantly. Moreover, we find that EL intensity can be tuned effectively at the same time, and the highest luminous efficiency can be achieved at an appropriate In concentration. These results suggest that an In-doping method can improve performance effectively in RE-related light-emitting devices for full-color display.
引用
收藏
页数：5
相关论文
共 27 条
[1]   X-ray excited optical luminescence studies of ZnO and Eu-doped ZnO nanostructures [J].
Armelao, L. ;
Heigl, F. ;
Jurgensen, A. ;
Blyth, R. I. R. ;
Regier, T. ;
Zhou, X.-T. ;
Sham, T. K. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2007, 111 (28) :10194-10200
[2]   Erbium containing ZnO prepared by ion beam sputtering deposition and thermal annealing mixing [J].
Chao, Liang-Chiun ;
Chang, Chung-Wen ;
Tsai, Dong-Yi .
APPLIED SURFACE SCIENCE, 2009, 255 (13-14) :6525-6528
[3]   Tuning electrical properties of transparent p-NiO/n-MgZnO heterojunctions with band gap engineering of MgZnO [J].
Chen, Xinman ;
Ruan, Kaibin ;
Wu, Guangheng ;
Bao, Dinghua .
APPLIED PHYSICS LETTERS, 2008, 93 (11)
[4]   Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films [J].
Choopun, S ;
Vispute, RD ;
Yang, W ;
Sharma, RP ;
Venkatesan, T ;
Shen, H .
APPLIED PHYSICS LETTERS, 2002, 80 (09) :1529-1531
[5]   Electrically pumped ultraviolet ZnO diode lasers on Si [J].
Chu, Sheng ;
Olmedo, Mario ;
Yang, Zheng ;
Kong, Jieying ;
Liu, Jianlin .
APPLIED PHYSICS LETTERS, 2008, 93 (18)
[6]   Mechanism and performance of forward and reverse bias electroluminescence at 1.54 mu m from Er-doped Si diodes [J].
Franzo, G ;
Coffa, S ;
Priolo, F ;
Spinella, C .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) :2784-2793
[7]  
Fukudome T., 2003, PHYS RES B, VB206, P287
[8]   Visible and infrared electroluminescence from an Er-doped n-ZnO/p-Si light emitting diode [J].
Harako, S. ;
Yokoyama, S. ;
Ide, K. ;
Zhao, X. ;
Komoro, S. .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (01) :19-22
[9]   The Scherrer equation versus the 'Debye-Scherrer equation' [J].
Holzwarth, Uwe ;
Gibson, Neil .
NATURE NANOTECHNOLOGY, 2011, 6 (09) :534-534
[10]   Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes [J].
Iwan, S. ;
Zhao, J. L. ;
Tan, S. T. ;
Bambang, S. ;
Hikam, M. ;
Fan, H. M. ;
Sun, X. W. .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 30 :263-266
123