Magnetoresistance in excess of 200% in ballistic Ni nanocontacts at room temperature and 100 Oe

被引：347

作者：

García, N ^{[1
]}

Muñoz, M ^{[1
]}

Zhao, YW ^{[1
]}

机构：

[1] CSIC, Lab Fis Sistemas Pequenos & Nanotecnol, E-28006 Madrid, Spain

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.82.2923

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present magnetoresistance experiments in magnetic Ni nanocontacts in the ballistic transport regime at room temperature. It is shown that the magnetoresistance for a few-atom contact reaches values of 280% at room temperature and for applied magnetic fields of 100 Oe. Results are presented for over 50 samples showing the trend that the smaller the contact the larger the magnetoresistance response. This indicates that the effect arises just at the nanocontact. [S0031-9007(99)08850-X].

引用

页码：2923 / 2926

页数：4

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