Theoretical investigations on the structural, lattice dynamical and thermodynamic properties of XC (X = Si, Ge, Sn)

被引:25
作者
Zhang, Xudong [1 ]
Quan, Shanyu [1 ]
Ying, Caihong [1 ]
Li, Zhijie [1 ]
机构
[1] Shenyang Univ Technol, Sch Sci, Shenyang 110870, Peoples R China
关键词
Semiconductors; Lattice dynamics; Thermodynamics properties; AB-INITIO CALCULATION; INDUCED PHASE-TRANSITION; PLANE-WAVE CALCULATIONS; BORN EFFECTIVE CHARGES; SILICON-CARBIDE; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; PRESSURE; 1ST-PRINCIPLES; SEMICONDUCTORS;
D O I
10.1016/j.ssc.2011.07.047
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
First-principles calculations, which is based on the plane-wave pseudopotential approach to the density functional perturbation theory within the local density approximation, have been performed to investigate the structural, lattice dynamical, and thermodynamic properties of SiC, GeC, and SnC. The results of ground state parameters, phase transition pressure and phonon dispersion are compared and agree well with the experimental and theoretical data in the previous literature. The obtained phonon frequencies at the zone-center are analyzed. We also used the phonon density of states and quasiharmonic approximation to calculate and predict some thermodynamic properties such as entropy, heat capacity, internal energy, and phonon free energy of SiC, GeC, and SnC in B3 phase. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1545 / 1549
页数:5
相关论文
共 33 条
  • [1] Orthorhombic intermediate state in the zinc blende to rocksalt transformation path of SiC at high pressure
    Catti, M
    [J]. PHYSICAL REVIEW LETTERS, 2001, 87 (03) : 35504 - 1
  • [2] ABINITIO PSEUDOPOTENTIAL STUDY OF STRUCTURAL AND HIGH-PRESSURE PROPERTIES OF SIC
    CHANG, KJ
    COHEN, ML
    [J]. PHYSICAL REVIEW B, 1987, 35 (15): : 8196 - 8201
  • [3] PHONON DISPERSION CURVES BY RAMAN SCATTERING IN SIC POLYTYPES 3C,4H,6H,15R,AND 21R
    FELDMAN, DW
    PARKER, JH
    CHOYKE, WJ
    PATRICK, L
    [J]. PHYSICAL REVIEW, 1968, 173 (03): : 787 - &
  • [4] ABINITIO CALCULATION OF PHONON DISPERSIONS IN SEMICONDUCTORS
    GIANNOZZI, P
    DE GIRONCOLI, S
    PAVONE, P
    BARONI, S
    [J]. PHYSICAL REVIEW B, 1991, 43 (09) : 7231 - 7242
  • [5] GONCHAROV AF, 1990, JETP LETT+, V52, P491
  • [6] Dynamical matrices, born effective charges, dielectric permittivity tensors, and interatomic force constants from density-functional perturbation theory
    Gonze, X
    Lee, C
    [J]. PHYSICAL REVIEW B, 1997, 55 (16): : 10355 - 10368
  • [7] A brief introduction to the ABINIT software package
    Gonze, X
    Rignanese, GM
    Verstraete, M
    Beuken, JM
    Pouillon, Y
    Caracas, R
    Jollet, F
    Torrent, M
    Zerah, G
    Mikami, M
    Ghosez, P
    Veithen, M
    Raty, JY
    Olevano, V
    Bruneval, F
    Reining, L
    Godby, R
    Onida, G
    Hamann, DR
    Allan, DC
    [J]. ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 2005, 220 (5-6): : 558 - 562
  • [8] First-principles computation of material properties: the ABINIT software project
    Gonze, X
    Beuken, JM
    Caracas, R
    Detraux, F
    Fuchs, M
    Rignanese, GM
    Sindic, L
    Verstraete, M
    Zerah, G
    Jollet, F
    Torrent, M
    Roy, A
    Mikami, M
    Ghosez, P
    Raty, JY
    Allan, DC
    [J]. COMPUTATIONAL MATERIALS SCIENCE, 2002, 25 (03) : 478 - 492
  • [9] First-principles investigations on electronic, elastic and optical properties of XC (X=Si, Ge, and Sn) under high pressure
    Hao, Aimin
    Yang, Xiaocui
    Wang, Xiaoming
    Zhu, Yan
    Liu, Xin
    Liu, Riping
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 108 (06)
  • [10] Pressure-dependent properties of SiC polytypes
    Karch, K
    Bechstedt, F
    Pavone, P
    Strauch, D
    [J]. PHYSICAL REVIEW B, 1996, 53 (20): : 13400 - 13413