Influence of annealing temperature on electron beam evaporated LiMn2O4 thin films

被引：0

作者：

Vani, V. Kalai ^{[1
]}

Hussain, O. M. ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Thin Film Lab, Tirupati 517502, Andhra Pradesh, India

来源：

THERMOPHYSICAL PROPERTIES OF MATERIALS AND DEVICES | 2008年

关键词：

thin films; electron beam evaporation technique; surface morphology;

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Thin films of LiMn2O4 were prepared by electron beam evaporation technique from a lithium rich target at a substrate temperature of 473 K in an oxygen partial pressure of 4-5 x 10(-4) mbar. The as deposited films were found to be X-ray amorphous. The films were annealed in the temperature range 500-1000 K for 4 hours in a controlled oxygen environment. The initial crystallization was observed for the LMn2O4 films annealed at temperature greater than 673 K. The films exhibited predominantly (111) orientation representing cubic spine] structure. The grain size increased with the increase of annealing temperature. The AFM and FTIR studies were also performed to understand the microsiructure of films for effective utilization as cathode material.

引用

页码：58 / 62

页数：5

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