Phosphorus incorporation into graphitic material via hot pressing of graphite oxide and triphenylphosphine

被引：18

作者：

Okotrub, A., V ^{[1
,2
]}

Kanygin, M. A. ^{[1
]}

Koroteev, V. O. ^{[1
]}

Stolyarova, S. G. ^{[1
]}

Gorodetskiy, D., V ^{[1
]}

Fedoseeva, Yu, V ^{[1
,2
]}

Asanov, I. P. ^{[1
,2
]}

Bulusheva, L. G. ^{[1
,2
]}

Vyalikh, A. ^{[3
]}

机构：

[1] SB RAS, Nikolaev Inst Inorgan Chem, 3 Acad Lavrentiev Ave, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, 2 Pirogova Str, Novosibirsk 630090, Russia

[3] Tech Univ Bergakad Freiberg, Inst Expt Phys, Leipziger Str 23, D-09599 Freiberg, Germany

来源：

SYNTHETIC METALS | 2019年 / 248卷

关键词：

Graphite oxide; Triphenylphosphine; Hot pressing; Phosphorus doping; XPS; NMR; DOPED GRAPHENE NANOSHEETS; SOLID-STATE NMR; FUNCTIONALIZED GRAPHENE; REDUCTION; OXIDATION;

D O I：

10.1016/j.synthmet.2019.01.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It was shown, that the treatment of graphite oxide (GO) at a temperature of 1000 degrees C and a static pressure of 500 bar recovers the graphene layers. Addition of triphenylphosphine to GO helps in removal of oxygen during the treatment and allows introducing ca. 0.7 at% of phosphorus in the product. Most phosphorus atoms are bonded with oxygen as the P-31 nuclear magnetic resonance spectrum showed. An analysis of the X-ray photoelectron P 2p spectrum additionally found the components corresponding to C-P and P-P bonding. Assembling of phosphorus atoms into nanometer clusters was confirmed by transmission electron microscopy. Raman spectroscopy and electrical conductivity measurements revealed the n-type doping of graphitic material through the incorporation of phosphorus.

引用

页码：53 / 58

页数：6

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