Design of a 54 to 63 GHz Differential Common Collector SiGe Colpitts VCO

被引：0

作者：

Barghouthi, Atheer ^{[1
]}

Ellinger, Frank ^{[1
]}

机构：

[1] Tech Univ Dresden, Chair Circuit Design & Network Theory, D-8027 Dresden, Germany

来源：

18TH INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS (MIKON-2010), VOL 1 AND VOL 2 | 2010年

关键词：

VCO; Colpitts; negative resistance; frequency synthesizer; phase noise; HBT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design of a 60 GHz differential common collector Colpitts VCO in SiGe HBT technology with 180 GHz f(t) is presented. The impact of parasitics on the negative resistance is evaluated and an extension regarding existing design equations is derived. Within a wide tuning range from 54.1 to 62.7 GHz, a phase noise performance between -98 and -90 dBc/Hz is measured at 1 MHz offset. To the knowledge of the authors this is the best phase noise performance of a 60 GHz VCO in silicon yielding such a high tuning bandwidth. At a dc voltage of 2 V and a dc current of 14 mA, the output power amounts to -5 +/- 1 dBm.

引用

页数：4