Study of influence of underlayer on the properties of magnetron sputtered samarium cobalt thin films

被引:19
|
作者
Wang, JY [1 ]
Ghantasala, MK
Sood, DK
Evans, PJ
机构
[1] Swinburne Univ Technol, Fac Engn & Ind Sci, Hawthorn, Vic 3122, Australia
[2] Western Michigan Univ, Dept Mech & Aeronaut Engn, Kalamazoo, MI 49024 USA
[3] RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia
[4] ANSTO, Div Phys, Menai, NSW, Australia
基金
澳大利亚研究理事会;
关键词
sputtering; magnetic properties; surface morphology; samarium cobalt;
D O I
10.1016/j.tsf.2005.05.033
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper presents the results of the investigation on the deposition and characterization of samarium cobalt (SmCo) thin films. To understand the underlayer effects on the magnetic properties, SmCo thin film's were deposited onto Cr/SiO2/Si, Cr/Si and Si at 600 degrees C and an operating argon pressure of 1.3 Pa using a direct current unbalanced magnetron sputtering technique. These films were characterized for composition, structure, microstructure and magnetic properties using Rutherford Backscattering Spectrometry, X-ray Diffractometer, Atomic Force Microscope and Superconducting Quantum Interference Device, respectively. The films deposited on the three substrate/intermediate layer combinations have the same atomic composition Of SMCo5.51O0.4. All prepared films are crystalline with predominantly hexagonal Sm2Co17 phase having grains of different orientations. The films deposited directly onto a Si substrate show relatively poor crystallinity and have a larger tensile residual stress in the film plane than those deposited with a Cr underlayer. The films prepared with a Cr underlayer are relatively dense with smaller grain sizes than those deposited directly onto a Si substrate. The in-plane hysteresis loops measured at room temperature indicate that the films deposited onto a Cr underlayer have relatively better magnetic properties. The use of a SiO2 film as a barrier layer between Cr and Si decreases the intrinsic coercivity of the film by about 6.3% when compared with the film without a SiO2 layer. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:192 / 199
页数:8
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