AFM characterization of PbTe quantum dots grown by molecular beam epitaxy under Volmer-Weber mode

被引:22
|
作者
Ferreira, SO
Neves, BRA
Magalhaes-Paniago, R [1 ]
Malachias, A
Rappl, PHO
Ueta, AY
Abramof, E
Andrade, MS
机构
[1] Univ Fed Minas Gerais, Dept Fis, BR-30161 Belo Horizonte, MG, Brazil
[2] Univ Fed Vicosa, Dept Fis, Vicosa, MG, Brazil
[3] Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, San Jose Dos Campos, SP, Brazil
[4] CETEC, Fundacao Ctr Tecnol Minas Gerais, Belo Horizonte, MG, Brazil
基金
巴西圣保罗研究基金会;
关键词
atomic force microscopy; nanostructures; molecular beam epitaxy; tellurites; semiconducting lead compounds;
D O I
10.1016/S0022-0248(01)01421-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
PbTe quantum dots (QD) were fabricated on BaF2(1 1 1) substrates by molecular beam epitaxy under Volmer-Weber (V-W) growth mode. The morphological aspects of the samples were characterized using atomic force microscopy-AFM. In contrast to other reports dealing with QD grown under V-W mode, the uniformity of size distribution is comparable to that obtained for QD systems grown under Stransky-Krastanov mode. Furthermore, the observed QD density is consistent, at comparable surface coverages and growth temperatures. with previously reported values for other QD systems. Also, as growth proceeds, an increase in both material incorporation efficiency and in QD aspect ratio have been observed. Finally, the highest aspect ratio islands are found to be faceted, indicating possible changes in QD morphology as more material is incorporated into them. These results show that the V-W growth mode can be successfully used to obtain self-assembled quantum dots. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:121 / 128
页数:8
相关论文
共 50 条
  • [41] Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy
    Hodgson, P. D.
    Bentley, M.
    Delli, E.
    Beanland, R.
    Wagener, M. C.
    Botha, J. R.
    Carrington, P. J.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (12)
  • [42] Misfitstrain and growth characteristics of InAs/GaAs quantum dots grown by molecular beam epitaxy
    Kim, Hyubg Seok
    Suh, Ju Hyung
    Park, Chan Gyung
    Lee, Sang June
    Noh, Sam Kyu
    IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS, 2006, : 198 - +
  • [43] Strong carrier localization in GaInN/GaN quantum dots grown by molecular beam epitaxy
    Damilano, B
    Vezian, S
    Grandjean, N
    Massies, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (12A): : L1357 - L1359
  • [44] Optical properties of CdSe quantum dots grown on ZnSe and ZnBeSe by molecular beam epitaxy
    Zhou, X
    Tamargo, MC
    Guo, SP
    Chen, YC
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (07) : 733 - 736
  • [45] Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy
    Gong, Q
    Offermans, P
    Nöetzel, R
    Koenraad, PM
    Wolter, JH
    SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials, 2004, : 119 - 124
  • [46] Self-assembled InGaN quantum dots grown by molecular-beam epitaxy
    Adelmann, C
    Simon, J
    Feuillet, G
    Pelekanos, NT
    Daudin, B
    Fishman, G
    APPLIED PHYSICS LETTERS, 2000, 76 (12) : 1570 - 1572
  • [47] Photoluminescence studies of the formation of MgS/CdSe quantum dots grown by molecular beam epitaxy
    Funato, M
    Bradford, C
    Balocchi, A
    Smith, JM
    Prior, KA
    Cavenett, BC
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 229 (01): : 477 - 480
  • [48] The effects of rapid thermal annealing on doubled quantum dots grown by molecular beam epitaxy
    Suraprapapich, S.
    Shen, Y. M.
    Fainman, Y.
    Horikoshi, Y.
    Panyakeow, S.
    Tu, C. W.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1791 - 1794
  • [49] Deep level defects of InAs quantum dots grown on GaAs by molecular beam epitaxy
    Park, CJ
    Kim, HB
    Lee, YH
    Kim, DY
    Kang, TW
    Hong, CY
    Cho, HY
    Kim, MD
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 1057 - 1061
  • [50] InGaAs Quantum Dots Grown by Molecular Beam Epitaxy for Light Emission on Si Substrates
    Bru-Chevallier, C.
    El Akra, A.
    Pelloux-Gervais, D.
    Dumont, H.
    Canut, B.
    Chauvin, N.
    Regreny, P.
    Gendry, M.
    Patriarche, G.
    Jancu, J. M.
    Even, J.
    Noe, P.
    Calvo, V.
    Salem, B.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (10) : 9153 - 9159