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- [42] Misfitstrain and growth characteristics of InAs/GaAs quantum dots grown by molecular beam epitaxy IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS, 2006, : 198 - +
- [43] Strong carrier localization in GaInN/GaN quantum dots grown by molecular beam epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (12A): : L1357 - L1359
- [45] Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials, 2004, : 119 - 124
- [47] Photoluminescence studies of the formation of MgS/CdSe quantum dots grown by molecular beam epitaxy PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 229 (01): : 477 - 480