机构:
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
CSIR Adv Mat & Proc Res Inst, Bhopal 462026, Madhya Pradesh, IndiaAcad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
Badatya, Simadri
[1
,2
]
Kumar, Anil
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Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, IndiaAcad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
Kumar, Anil
[1
]
Srivastava, Avanish Kumar
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Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
CSIR Adv Mat & Proc Res Inst, Bhopal 462026, Madhya Pradesh, IndiaAcad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
Srivastava, Avanish Kumar
[1
,2
]
Gupta, Manoj Kumar
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Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
CSIR Adv Mat & Proc Res Inst, Bhopal 462026, Madhya Pradesh, IndiaAcad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
Gupta, Manoj Kumar
[1
,2
]
机构:
[1] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
[2] CSIR Adv Mat & Proc Res Inst, Bhopal 462026, Madhya Pradesh, India
Herein, high-performance flexible and stable Cu-Ni nanoalloy decorated carbon nanotube (CNT) reinforced poly(vinylidene fluoride) (PVDF) based piezoelectric nanogenerator is presented for the first time with very high current and power density. The formation of crystalline beta-phase is confirmed using FT-IR and Raman spectra analysis. HR-TEM study reveals the formation of Cu-Ni nanoalloys with well-defined interconnected structure with CNT. The Cu-Ni nanoalloy decorated CNT-PVDF nanogenerator device exhibits a high output voltage of 12 V and high current density of 0.3 mu A cm(-2) compared to pristine PVDF nanogenerator (4 V and 10 nA cm(-2)). Very high power density of 204 mu W cm(-3) is obtained from the nanocomposite nanogenerator. Piezoelectric force microscopy study reveals very high piezoelectric charge coefficient (d(33)) of about 160 pm V-1 from Cu-Ni decorated CNT-PVDF. Very stable output performance with almost no degradation till 1500 cycles is observed from the Cu-Ni nanoalloy CNT-PVDF nanogenerator. Such high stability is due to its dramatic improved high tensile strength of 60 MPa. Very high dielectric constant of 500 is observed from Cu-Ni decorated CNT-PVDF as compared to pristine PVDF (epsilon' approximate to 20). The dramatic increase in output performance even under without electrical poling is discussed in light of self-dipole alignment, in-situ poling, high d(33), interfacial polarization, and enhanced dielectric properties.
机构:
Korea Inst Sci & Technol, Hybrid Mat Res Ctr, Seoul, South KoreaKorea Inst Sci & Technol, Hybrid Mat Res Ctr, Seoul, South Korea
Kim, Gwang Ho
Hong, Soon Man
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Korea Inst Sci & Technol, Hybrid Mat Res Ctr, Seoul, South KoreaKorea Inst Sci & Technol, Hybrid Mat Res Ctr, Seoul, South Korea
Hong, Soon Man
Seo, Yongsok
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机构:
Seoul Natl Univ, Intellectual Text Res Ctr, Seoul, South Korea
Seoul Natl Univ, Sch Mat Sci & Engn, Seoul, South KoreaKorea Inst Sci & Technol, Hybrid Mat Res Ctr, Seoul, South Korea
机构:
CSIR Adv Mat & Proc Res Inst, Bhopal 462026, Madhya Pradesh, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, IndiaCSIR Adv Mat & Proc Res Inst, Bhopal 462026, Madhya Pradesh, India
Badatya, Simadri
Bharti, Dhiraj Kumar
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CSIR Adv Mat & Proc Res Inst, Bhopal 462026, Madhya Pradesh, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, IndiaCSIR Adv Mat & Proc Res Inst, Bhopal 462026, Madhya Pradesh, India
Bharti, Dhiraj Kumar
Sathish, Natarajan
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CSIR Adv Mat & Proc Res Inst, Bhopal 462026, Madhya Pradesh, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, IndiaCSIR Adv Mat & Proc Res Inst, Bhopal 462026, Madhya Pradesh, India
Sathish, Natarajan
Srivastava, Avanish Kumar
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机构:
CSIR Adv Mat & Proc Res Inst, Bhopal 462026, Madhya Pradesh, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, IndiaCSIR Adv Mat & Proc Res Inst, Bhopal 462026, Madhya Pradesh, India
Srivastava, Avanish Kumar
Gupta, Manoj Kumar
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CSIR Adv Mat & Proc Res Inst, Bhopal 462026, Madhya Pradesh, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, IndiaCSIR Adv Mat & Proc Res Inst, Bhopal 462026, Madhya Pradesh, India
机构:
Florida State Univ, Dept Ind & Mfg Engn, High Performance Inst, Tallahassee, FL 32310 USAFlorida State Univ, Dept Ind & Mfg Engn, High Performance Inst, Tallahassee, FL 32310 USA
Chatterjee, Jhunu
Nash, Naomi
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Florida State Univ, Dept Ind & Mfg Engn, High Performance Inst, Tallahassee, FL 32310 USAFlorida State Univ, Dept Ind & Mfg Engn, High Performance Inst, Tallahassee, FL 32310 USA
Nash, Naomi
Cottinet, Pierre-Jean
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机构:
Florida State Univ, Dept Ind & Mfg Engn, High Performance Inst, Tallahassee, FL 32310 USAFlorida State Univ, Dept Ind & Mfg Engn, High Performance Inst, Tallahassee, FL 32310 USA
Cottinet, Pierre-Jean
Wang, Ben
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Florida State Univ, Dept Ind & Mfg Engn, High Performance Inst, Tallahassee, FL 32310 USAFlorida State Univ, Dept Ind & Mfg Engn, High Performance Inst, Tallahassee, FL 32310 USA