Terahertz radiation and second-harmonic generation from InAs: Bulk versus surface electric-field-induced contributions

被引：98

作者：

Reid, M ^{[1
]}

Cravetchi, IV ^{[1
]}

Fedosejevs, R ^{[1
]}

机构：

[1] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB T6G 2V4, Canada

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.72.035201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polarized second-harmonic generation and terahertz radiation in reflection from (100), (110), and (111) faces of n-type InAs crystals are investigated as a function of the sample azimuthal orientation under excitation from femtosecond Ti:sapphire laser pulses. The expressions describing the second-order response (optical second-harmonic generation and optical rectification) in reflection from zinc-blende crystals, such as InAs, are calculated taking into account the bulk electric-dipole contribution and the first-order surface electric-field-induced contribution. It is shown that the two contributions can be separated based on rotation symmetry considerations. Moreover, a direct comparison of the second-harmonic generation and terahertz radiation emission indicates that the observed dominant surface electric-field-induced optical rectification component may be attributed to the large free-carrier contribution to the third-order susceptibility in InAs.

引用

页数：9

共 40 条

[1]

Adachi S., 1999, Optical Constants of Crystalline and Amorphous Semiconductors Numerical Data and Graphical Information, V1st ed.

[2] Terahertz emission from p-InAs due to the instantaneous polarization [J].

Adomavicius, R ;

Urbanowicz, A ;

Molis, G ;

Krotkus, A ;

Satkovskis, E .

APPLIED PHYSICS LETTERS, 2004, 85 (13) :2463-2465

[3] PICOSECOND PHOTOCONDUCTING HERTZIAN DIPOLES [J].

AUSTON, DH ;

CHEUNG, KP ;

SMITH, PR .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :284-286

[4] Surface nonlinear optics: a historical overview [J].

Bloembergen, N .

APPLIED PHYSICS B-LASERS AND OPTICS, 1999, 68 (03) :289-293

[5]

Boyd R. W., 2003, NONLINEAR OPTICS

[6] RAMAN-SCATTERING AT (111) AND (111) SURFACES OF N-INAS AND P-INAS [J].

BUCHNER, S ;

CHING, LY ;

BURSTEIN, E .

PHYSICAL REVIEW B, 1976, 14 (10) :4459-4462

[7]

Butcher PN., 1990, Cambridge Studies in Modern Optics, DOI 10.1017/CBO9781139167994

[8] CALCULATION OF OPTICAL-EXCITATIONS IN CUBIC SEMICONDUCTORS .3. 3RD-HARMONIC GENERATION [J].

CHING, WY ;

HUANG, MZ .

PHYSICAL REVIEW B, 1993, 47 (15) :9479-9491

[9] OPTICAL RECTIFICATION AT SEMICONDUCTOR SURFACES [J].

CHUANG, SL ;

SCHMITTRINK, S ;

GREENE, BI ;

SAETA, PN ;

LEVI, AFJ .

PHYSICAL REVIEW LETTERS, 1992, 68 (01) :102-105

[10] THz electromagnetic emission by coherent infrared-active phonons [J].

Dekorsy, T ;

Auer, H ;

Bakker, HJ ;

Roskos, HG ;

Kurz, H .

PHYSICAL REVIEW B, 1996, 53 (07) :4005-4014

← 1 2 3 4 →