Spin-polarized electron tunneling in polycrystalline Sr2FeMoO6 thin films

被引：4

作者：

Muduli, P. K. ^{[1
]}

Budhani, R. C. ^{[1
]}

Topwal, D. ^{[2
]}

Sarma, D. D. ^{[2
,3
]}

机构：

[1] Indian Inst Technol, Dept Phys, Condensed Matter Low Dimens Syst Lab, Kanpur 208016, Uttar Pradesh, India

[2] Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India

[3] Indian Assoc Cultivat Sci, Ctr Adv Mat, Kolkata 700032, India

来源：

25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 4: QUANTUM PHASE TRANSITIONS AND MAGNETISM | 2009年 / 150卷

关键词：

MAGNETORESISTANCE;

D O I：

10.1088/1742-6596/150/4/042132

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

We report a comparative study of magnetotransport in high quality epitaxial and polycrystalline thin films of Sr2FeMoO6 deposited on single crystal substrates of SrTiO3 (STO) and Yttria-stabilized zirconia (YSZ) respectively. The polycrystallinity of the films on YSZ affects their magnetotransport significantly. The resistivity rho(T) of such films is thermally activated in contrast to metallic behavior of rho(T) of the thin films on STO. A large (approximate to 13 %) low-field magnetoresistance (MR) at 10 K is seen in the polycrystalline samples compared to the negligibly small MR (approximate to 2.5%)of their epitaxial counterparts. A detail analysis of the temperature and magnetic-field-dependent resistivity and magnetization provide strong evidence for tunneling of spin-polarized carriers through a magnetic intergranular material of insulating ground state.

引用

页数：4

共 6 条

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