Atomic scale oxidation of a complex system:: O2/α-SiC(0001)-(3x3)

被引：71
作者：
Amy, F
Enriquez, H
Soukiassian, P
Storino, PF
Chabal, YJ
Mayne, AJ
Dujardin, G
Hwu, YK
Brylinski, C
机构：
[1] CEA Saclay, DSM, DRECAM, SPCSI,SIMA, F-91191 Gif Sur Yvette, France
[2] Univ Paris 11, Dept Phys, F-91405 Orsay, France
[3] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
[4] Univ Paris 11, Photophys Mol Lab, F-91405 Orsay, France
[5] Acad Sinica, Taipei 115, Taiwan
[6] Thomson CSF, Cent Rech Lab, THALES, F-91401 Orsay, France
来源：
PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 19期
关键词：
D O I：
10.1103/PhysRevLett.86.4342
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The atomic scale oxidation of the alpha -SiC(0001)-(3 x 3) surface is investigated by atom-resolved scanning tunneling microscopy, core level synchrotron radiation based photoemission spectroscopy, and infrared absorption spectroscopy. The results reveal that the initial oxidation takes place through the relaxation of lower layers, away from the surface dangling bond, in sharp contrast to silicon oxidation.
引用
收藏
页码：4342 / 4345
页数：4
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