The mechanism of formation, growth and transformation of microdefects in dislocation-free monocrystals of silicon

被引：1
|
作者：
Talanin, VI [1 ]
机构：
[1] Zaporozhye State Engn Acad, UA-330114 Zaporozhe, Ukraine
来源：
SIBERIAN RUSSIAN STUDENT WORKSHOPS AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS | 2000年
关键词：
D O I：
10.1109/SREDM.2000.888561
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：87 / 90
页数：4
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