The mechanism of formation, growth and transformation of microdefects in dislocation-free monocrystals of silicon

被引：1

作者：

Talanin, VI ^{[1
]}

机构：

[1] Zaporozhye State Engn Acad, UA-330114 Zaporozhe, Ukraine

来源：

SIBERIAN RUSSIAN STUDENT WORKSHOPS AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS | 2000年

关键词：

D O I：

10.1109/SREDM.2000.888561

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：87 / 90

页数：4

共 50 条

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