High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects

被引：6

作者：

Belhaj, M ^{[1
]}

Maneux, C ^{[1
]}

Labat, N ^{[1
]}

Touboul, A ^{[1
]}

Bove, P ^{[1
]}

机构：

[1] Univ Bordeaux 1, UMR 5818 CNRS, ENSEIRB, IXL, F-33405 Talence, France

来源：

MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 9-11期

关键词：

D O I：

10.1016/S0026-2714(03)00334-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

2D physical simulation has been performed to analyse the physical mechanisms responsible for the observed current gain drop at high collector current in InP/GaAsSb/InP double heterojunction bipolar transistor (DHBT). This analysis is based on the evolution of the electric field and carrier concentration profiles in the vicinity of the base-collector junction as a function of injection level. The degradation of the DHBT performances at high collector current densities is attributed to the formation of a parasitic electron barrier at the base collector junction. The onset of this parasitic barrier formation has been investigated as a function of the intrinsic collector epitaxial parameters (doping and thickness), as well as the extrinsic collector access parameters (sub-collector ohmic contact). (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1731 / 1736

页数：6

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