Band parameters and strain effects in ZnO and group-III nitrides

被引:61
|
作者
Yan, Qimin [1 ]
Rinke, Patrick [1 ,2 ]
Winkelnkemper, M. [3 ]
Qteish, A. [4 ]
Bimberg, D. [3 ]
Scheffler, Matthias [1 ,2 ]
Van de Walle, Chris G. [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
[3] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[4] Yarmouk Univ, Dept Phys, Irbid 21163, Jordan
关键词
SPACE-TIME METHOD; DEFORMATION POTENTIALS; EXCITONIC TRANSITIONS; ELECTRONIC-STRUCTURE; GREENS-FUNCTION; GAN; WURTZITE; ENERGY; EXCHANGE; BLUE;
D O I
10.1088/0268-1242/26/1/014037
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present consistent sets of band parameters (including band gaps, crystal-field splittings, effective masses, Luttinger and E-P parameters) for AlN, GaN, InN and ZnO in the wurtzite phase. For band-energy differences we observe a pronounced nonlinear dependence on strain. Consistent and complete sets of deformation potentials are then derived for realistic strain conditions in the linear regime around the experimental equilibrium volume. To overcome the limitations of density-functional theory in the local-density and generalized-gradient approximations we employ the Heyd-Scuseria-Ernzerhof hybrid functional as well as exact exchange (OEPx)-based quasi-particle energy calculations in the G(0)W(0) approach.
引用
收藏
页数:8
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