Multiple Roles of Hydrogen Treatments in Amorphous In-Ga-Zn-O Films

被引：37

作者：

Tang, Haochun ^{[1
]}

Kishida, Yosuke ^{[1
]}

Ide, Keisuke ^{[1
]}

Toda, Yoshitake ^{[2
]}

Hiramatsu, Hidenori ^{[1
,2
]}

Matsuishi, Satoru ^{[2
]}

Ueda, Shigenori ^{[3
,4
]}

Ohashi, Naoki ^{[2
,5
]}

Kumomi, Hideya ^{[2
]}

Hosono, Hideo ^{[1
,2
]}

Kamiya, Toshio ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Lab Mat & Struct, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Mat Res Ctr Element Strategy, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[3] Natl Inst Mat Sci, Quantum Beam Unit, Tsukuba, Ibaraki 3050047, Japan

[4] Natl Inst Mat Sci, Synchrotron Xray Stn SPring 8, Mikazuki, Hyogo 6795148, Japan

[5] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2017年 / 6卷 / 07期

基金：

日本学术振兴会;

关键词：

RAY PHOTOELECTRON-SPECTROSCOPY; H-2 PLASMA TREATMENT; OXIDE SEMICONDUCTOR; ELECTRONIC-STRUCTURE; ROOM-TEMPERATURE; TRANSISTORS; INDIUM; STATES; MODEL; LAYER;

D O I：

10.1149/2.0071707jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The roles of hydrogen introduced by post-deposition hydrogen treatments were investigated for amorphous In-Ga-Zn-O (a-IGZO) films using room-temperature hydrogen plasma (H-plasma) and high-temperature H-2 annealing. It was found that these treatments cause different effects as confirmed by hard X-ray photoemission spectroscopy and difference spectrum analyses. The H-plasma treatment increased both the near-valence band maximum (near-VBM) states (observed just above VBM) and the -OH bonds (confirmed by O 1s core spectrum) if a-IGZO films were deposited under an optimum condition, leading to the conclusion that the room-temperature H treatment incorporates H to a-IGZO films as -OH bonds, and the increase in the relatively shallow near-VBM states (peaked at similar to 1.0 eV, extended to similar to 2.4 eV from VBM) is ascribed to the generated -OH bonds. On the other hand, high-temperature H-2 annealing did not increase the O 1s -OH signal, and its difference spectrum showed a different peak centered at similar to 0.7 eV. This difference spectrum is similar to that of H-less a-IGZO films deposited without O-2 supply by ultra-high vacuum sputtering and assigned to oxygen deficiency. These results will contribute to control the operation characteristics and the instability issues of a-IGZO TFTs. Further, the deconvoluted difference spectra will be the standard fingerprints of these defects in a-IGZO. (C) 2017 The Electrochemical Society. All rights reserved.

引用

页码：P365 / P372

页数：8