Characterization of bulk and surface properties in semiconductors using non-contacting techniques.

Scanning Kelvin Probe (SKP) and Surface Photovoltage (SPV) methods have been implemented in a single toot in order to get information on surface, as well as on bulk, electronic properties of crystalline Si wafers. The two combined methods allow for the measurements in non contact and non destructive way of three parameters: minority carrier diffusion length, majority carrier distribution in the near-surface region and work function difference over the whole wafer area. Examples of the application of these methods to the characterization of crystalline wafers will be presented.