Formation of regular step arrays on Si(111)7x7

被引:128
|
作者
Lin, JL
Petrovykh, DY
Viernow, J
Men, FK
Seo, DJ
Himpsel, FJ
机构
[1] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA
[2] Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
[3] Natl Chung Cheng Univ, Dept Phys, Chiayi, Taiwan
[4] Chosun Univ, Dept Sci Educ Phys Major, Kwangju 501759, South Korea
关键词
D O I
10.1063/1.368077
中图分类号
O59 [应用物理学];
学科分类号
摘要
Highly regular arrays of steps are produced on vicinal Si(111)7X7 surfaces. A tilt of the surface normal from (111) toward ((1) over bar (1) over bar 2) produces single steps (0.3 nm high and typically 15 nm apart). The opposite tilt toward (11 (2) over bar) produces bunched steps with adjustable height (1-5 nm) and a spacing of 70 nm. Preparation criteria for straight edges and regular spacings are determined, taking into account the miscut angle (azimuthal and polar), annealing sequence, current direction, and applied stress. (C) 1998 American Institute of Physics.
引用
收藏
页码:255 / 260
页数:6
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