Ionicity and transverse effective charge in GaxIn1-xSb1-y quaternary alloy semiconductors

被引：33

作者：

Baaziz, H ^{[1
]}

Charifi, Z ^{[1
]}

Bouarissa, N ^{[1
]}

机构：

[1] Univ Msila, Dept Phys, Msila 28000, Algeria

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2001年 / 68卷 / 1-3期

关键词：

ionicity; transverse effective charge; virtual-crystal approximation; quaternary alloy semiconductors;

D O I：

10.1016/S0254-0584(00)00352-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A theoretical study was carried out on the ionicity and transverse effective charge (e(T)*) in GaxIn1-xAsySb1-y quaternary system lattice matched to GaSb and InAs for the zinc blende phase. The calculations are based on the pseudopotential theory under the virtual-crystal approximation. The expression we used for determining e(T)* provides good agreement with available experimental data. Attention has been paid to the influence of the alloy disorder on the studied quantities by taking into account in the calculations the effects of compositional variations. The effect of changing the substrate is also checked. Both effects are found to have an influence on the results. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：197 / 203

页数：7

共 21 条

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