MEMS wafer-level packaging with conductive vias and wafer bonding

被引:0
|
作者
Yun, C. H.
Martin, J. R.
Chen, T.
Davis, D.
机构
关键词
wafer level package; through wafer via; thermo-compression bonding;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Micromachined accelerometers were packaged at wafer-level using both via-last and via-first approaches. In the via-last approach, a through-hole etched cap wafer was bonded to a micromachined device wafer using glass frit. Interconnections from the bond pads on the device wafer to the top of the cap wafer were made through the holes using sputter-deposition of metals. The bonded pair was then solder bumped, and diced for individually packaged devices. In the via-first approach, the cap wafer vias were filled by poly-crystalline silicon before bonding. After the Al to Al thermo-compression bonding of the cap and MEMS wafers, the vias were exposed by back-grinding. The exposed vias were then redistributed and solder-bumped. The wafer-level packaged three-axis accelerometer demonstrated the same functionality as production accelerometers when it was probed in wafer form as well as when it was mounted on a board.
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页数:2
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