Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance-voltage measurements:: Capabilities and limits

被引：37

作者：

Gudovskikh, A. S.

IbrahiM, S.

Kleider, J.-P.

Damon-Lacoste, J.

Cabarrocas, P. Roca I.

Veschetti, Y.

Ribeyron, P. J.

机构：

[1] Univ Paris 06, Ecole Super Elect, Lab Genie Elect Paris, CNRS,UMR 8507, F-91192 Gif Sur Yvette, France

[2] Univ Paris 07, Ecole Super Elect, Lab Genie Elect Paris, CNRS,UMR 8507, F-91192 Gif Sur Yvette, France

[3] Ecole Polytech, LPICM, CNRS, UMR 7647, F-91128 Palaiseau, France

[4] CEA, F-38054 Grenoble 9, France

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 19期

关键词：

heterostructures; solar cells; capacitance technique;

D O I：

10.1016/j.tsf.2006.11.198

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The capabilities and limitations of the well-known C-V technique for the determination of the conduction band offsets in (n)a-Si:H/(p)c-Si heterojunctions are presented. In particular, the effects due to the presence of an inversion layer in c-Si and a non-negligible defect density at the a-Si:H/c-Si interface on the reliability of the C-V intercept method are discussed. The influence of the Fermi level positions in (p)c-Si and (n)a-Si:H on the inversion layer formation and the influence of the interface defect density have been analysed using numerical simulations and experimental measurements. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：7481 / 7485

页数：5

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