32-Gb/s OOK and 64-Gb/s PAM-4 Modulation Using a Single-Drive Silicon Mach-Zehnder Modulator with 2 V Drive Voltage

被引：13

作者：

Zhou, Gangqiang ^{[1
]}

Zhou, Linjie ^{[1
]}

Guo, Yuyao ^{[1
]}

Chen, Shuhuang ^{[1
]}

Lu, Liangjun ^{[1
]}

Liu, Lei ^{[2
]}

Chen, Jianping ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Elect Engn, State Key Lab Adv Opt Commun Syst & Networks, Shanghai Key Lab Nav & Locat Serv,Shanghai Inst A, Shanghai 200240, Peoples R China

[2] Huawei Technol Co Ltd, Transmiss Technol Res Dept, Shenzhen 518129, Guangdong, Peoples R China

来源：

IEEE PHOTONICS JOURNAL | 2019年 / 11卷 / 06期

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

Silicon modulator; silicon photonics; Mach-Zehnder modulator; PAM-4; modulation; OOK modulation; U-shaped PN junction; high modulation efficiency; MICRORING MODULATOR; PUSH-PULL; DAC-LESS; PERFORMANCE; JUNCTIONS; DESIGN;

D O I：

10.1109/JPHOT.2019.2954597

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a high-efficiency silicon Mach-Zehnder modulator with U-shaped PN junctions. The depletion region of the U-shaped PN junction has a large overlap with the waveguide optical mode, leading to a low drive voltage. The calculated modulation efficiency is 0.33 V center dot cm at 0 V bias and 0.55 V center dot cm at -2 V bias. On-off keying (OOK) modulation and four-level pulse amplitude modulation (PAM-4) are achieved at 32 Gb/s and 64 Gb/s data rates under 2 V drive voltage, respectively. The bit error rate for the PAM-4 modulation is below the hard-decision forward error correction threshold of 3.8 x 10(-3).

引用

页数：10

共 42 条

[41] Silicon PAM-4 optical modulator driven by two binary electrical signals with different peak-to-peak voltages [J].