Thermal Transient Characteristics of Flip Chip High Power Light Emitting Diodes

被引：1
作者：
Wang, Chien-Ping [1 ]
Chen, Tzung-Te [1 ]
Yang, Shih-Chun [1 ]
Fu, Han-Kuei [1 ]
Lee, An-Tse [1 ]
Chou, Pei-Ting [1 ]
Sun, Chien-Jen [1 ]
Chen, Chiu-Ling [1 ]
Chu, Mu-Tao [1 ]
机构：
[1] ITRI, Elect & Optoelect Res Labs, Hsinchu, Taiwan
来源：
TENTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING | 2010年 / 7784卷
关键词：
Light emitting diode (LED); thermal resistance; flip chip;
D O I：
10.1117/12.861083
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The die-attached quality and the thermal transient characteristics of high power flip chip light emitting diodes (LEDs) are investigated using thermal transient tester. Various die-attached materials were utilized to compare the difference in their thermal resistances and long term performance. By applying accelerated aging stress, the deterioration rates at the die-attached layers were obtained. Numerical simulation provided further understanding of LED device temperature distribution and also revealed that the thermal variance at the die-attached interface can be recognized within only few milliseconds for the flip chip structure. The effects of bump arrangement and material were analyzed to achieve high temperature uniformity and low thermal resistance for high power LEDs.
引用
收藏
页数：7
相关论文
共 50 条
[41]   Modified wide radiating lenses of the power-chip light emitting diodes for a direct-lit backlight [J].
Chen, Chi-Feng ;
Wu, Cheng-Chia ;
Wu, Jhong-Hao .
OPTIK, 2010, 121 (09) :847-852
[42]   Thermal Management for Flip-chip High Power Amplifiers utilizing Carbon Nanotube Bumps [J].
Soga, Ikuo ;
Kondo, Daiyu ;
Yamaguchi, Yoshitaka ;
Iwai, Taisuke ;
Kikkawa, Toshihide ;
Joshin, Kazukiyo .
2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY: SYNERGY OF RF AND IC TECHNOLOGIES, PROCEEDINGS, 2009, :221-224
[43]   Thermal Management for Flip-chip High Power Amplifiers utilizing Carbon Nanotube Bumps [J].
Soga, Ikuo ;
Kondo, Daiyu ;
Yamaguchi, Yoshitaka ;
Iwai, Taisuke ;
Kikkawa, Toshihide ;
Joshin, Kazukiyo .
2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT 2009), 2009, :100-+
[44]   Electrical and optical characterization of GaN-based light-emitting diodes fabricated with top-emission and flip-chip structures [J].
Kim, Hyunsoo ;
Lee, Sung-Nam ;
Cho, Jaehee .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2010, 13 (03) :180-184
[45]   Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods [J].
安铁雷 ;
孙波 ;
魏同波 ;
赵丽霞 ;
段瑞飞 ;
廖元勋 ;
李晋闽 ;
伊福廷 .
Journal of Semiconductors, 2013, (11) :53-56
[46]   Improved light extraction of nitride-based flip-chip light-emitting diodes by forming air voids on Ar-implanted sapphire substrate [J].
Yeh, Yu-Hsiang ;
Sheu, Jinn-Kong ;
Lee, Ming-Lun ;
Chen, Po-Cheng ;
Yang, Yu-Chen ;
Yen, Cheng-Hsiung ;
Lai, Wei-Chih .
THIRTEENTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING, 2014, 9190
[47]   Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods [J].
An Tielei ;
Sun Bo ;
Wei Tongbo ;
Zhao Lixia ;
Duan Ruifei ;
Liao Yuanxun ;
Li Jinmin ;
Yi Futing .
JOURNAL OF SEMICONDUCTORS, 2013, 34 (11)
[48]   Thermal analysis of high power GaN-bawd light emitting diode [J].
Guo, Debo ;
Wang, Libin ;
Liu, Zhiqiang ;
Liang, Meng ;
Fan, Manning ;
Wang, Guohong ;
Wang, Liangchen ;
Li, Jinmin .
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, 2008, 6841
[49]   TIM Selection Methodology for High Power Flip Chip Packages [J].
Islam, Nokibul ;
Lee, SeoWon ;
Lee, JoonYeob ;
Ka, YunHyeon ;
Khim, JinYoung ;
Galloway, Jesse .
2010 12TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS, 2010,
[50]   An 83% Enhancement in the External Quantum Efficiency of Ultraviolet Flip-Chip Light-Emitting Diodes With the Incorporation of a Self-Textured Oxide Mask [J].
Shen, Kun-Ching ;
Lin, Wen-Yu ;
Wuu, Dong-Sing ;
Huang, Shih-Yung ;
Wen, Kuo-Sheng ;
Pai, Shih-Feng ;
Wu, Liang-Wen ;
Horng, Ray-Hua .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (02) :274-276
12345