In-Situ Monitoring on Junction Temperature for Degradation Analysis of Light Emitting Diodes

被引：0

作者：

Ma, Byungjin ^{[1
]}

Choi, Sungsoon ^{[1
]}

Lee, Kwan Hun ^{[1
]}

机构：

[1] Korea Elect Technol Inst, Seongnam Si, Gyeonggi Do, South Africa

来源：

2015 21ST INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS (THERMINIC) | 2015年

关键词：

RELIABILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A precise monitoring on the junction temperature of the light-emitting diode (LED) packages during a lifetime tests is very helpful to make a diagnosis of their quality change and to analyse the optical degradation. We proposed a new model for internal quantum efficiency (IQE) of the LED packages as a function of the junction temperature and developed an in-situ IQE measurement system for an investigation of the optical degradation mechanism in the LED packages. A lifetime test for 2,500 hours had been carried out with in-situ monitoring on the relative optical power and the sub-threshold leakage current. In addition, we had measured the junction temperature and the IQE as a tool for the degradation analysis of the LED packages. No change in the IQE and the leakage current throughout the lifetime test has been observed although there was a 10% optical degradation of the LED package.

引用

页数：4

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