In-Situ Monitoring on Junction Temperature for Degradation Analysis of Light Emitting Diodes

被引：0
作者：
Ma, Byungjin [1 ]
Choi, Sungsoon [1 ]
Lee, Kwan Hun [1 ]
机构：
[1] Korea Elect Technol Inst, Seongnam Si, Gyeonggi Do, South Africa
来源：
2015 21ST INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS (THERMINIC) | 2015年
关键词：
RELIABILITY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A precise monitoring on the junction temperature of the light-emitting diode (LED) packages during a lifetime tests is very helpful to make a diagnosis of their quality change and to analyse the optical degradation. We proposed a new model for internal quantum efficiency (IQE) of the LED packages as a function of the junction temperature and developed an in-situ IQE measurement system for an investigation of the optical degradation mechanism in the LED packages. A lifetime test for 2,500 hours had been carried out with in-situ monitoring on the relative optical power and the sub-threshold leakage current. In addition, we had measured the junction temperature and the IQE as a tool for the degradation analysis of the LED packages. No change in the IQE and the leakage current throughout the lifetime test has been observed although there was a 10% optical degradation of the LED package.
引用
收藏
页数：4
相关论文
共 50 条
[21]   To develop reliability life plans on low temperature operation testing for organic light emitting diodes [J].
Chen, Wen-Kuei ;
Kuo, Hong-Yi .
Eleventh ISSAT International Conference Reliability and Quality in Design, Proceedings, 2005, :78-82
[22]   An Online Correction Method for Inaccuracy of Junction Temperature Monitoring Caused by Degradation of SiC MOSFETs [J].
Zhang, Ziyang ;
Liang, Lin ;
Fei, Haoyang ;
Han, Lubin ;
Shang, Hai .
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2024, 12 (06) :5511-5522
[23]   Life tests and failure analysis of AlGaN/InGaN/GaN blue light emitting diodes [J].
Barton, DL ;
Osinski, M ;
Helms, CJ ;
Berg, NH ;
Phillips, BS .
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IV, 1996, 2693 :64-72
[24]   An analysis on damage of light-emitting diodes reliability induced by electronic static discharge [J].
Nan, Tingting ;
He, Piaopiao ;
Yin, Luqiao ;
Zhang, Jianhua .
2016 17TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2016, :1122-1126
[25]   Degradation state analysis of the IGBT module based on apparent junction temperature [J].
Xu, Guoqing ;
Shao, Lingfeng ;
Xu, Xiaoyan ;
Li, Shen .
PROTECTION AND CONTROL OF MODERN POWER SYSTEMS, 2023, 8 (01)
[26]   InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping [J].
T. C. Wen ;
S. J. Chang ;
Y. K. Su ;
L. W. Wu ;
C. H. Kuo ;
W. C. Lai ;
J. K. Sheu ;
T. Y. Tsai .
Journal of Electronic Materials, 2003, 32 :419-422
[27]   InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping [J].
Wen, TC ;
Chang, SJ ;
Su, YK ;
Wu, LW ;
Kuo, CH ;
Lai, WC ;
Sheu, JK ;
Tsai, TY .
JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (05) :419-422
[28]   Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes [J].
Herzog, Alexander ;
Benkner, Simon ;
Zandi, Babak ;
Buffolo, Matteo ;
Van Driel, Willem D. ;
Meneghini, Matteo ;
Khanh, Tran Quoc .
IEEE ACCESS, 2023, 11 :19928-19940
[29]   Nitride-based green light-emitting diodes with high temperature GaN barrier layers [J].
Wu, LW ;
Chang, SJ ;
Su, YK ;
Chuang, RW ;
Wen, TC ;
Kuo, CH ;
Lai, WC ;
Chang, CS ;
Tsai, JM ;
Sheu, JK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (08) :1766-1770
[30]   To develop reliability life model for organic light emitting diodes operating under high temperature environment [J].
Kuo, HY ;
Chen, WK .
PROCEEDINGS OF THE 11TH INTERNATIONAL CONFERENCE ON INDUSTRIAL ENGINEERING AND ENGINEERING MANAGEMENT, VOLS 1 AND 2: INDUSTRIAL ENGINEERING AND ENGINEERING MANAGEMENT IN THE GLOBAL ECONOMY, 2005, :52-55
12345