Green InP-based quantum dots and electroluminescent light-emitting diodes

被引:2
作者
Bian, Yangyang [1 ]
Chen, Fei [1 ]
Shen, Huaibin [1 ]
Du, Zuliang [1 ]
机构
[1] Henan Univ, Key Lab Special Funct Mat, Minist Educ, Kaifeng 475004, Peoples R China
基金
中国国家自然科学基金;
关键词
InP-based quantum dot; green-emitting; core; shell structure; quantum dot light-emitting diode; HIGHLY EFFICIENT; AT-ZNSES; NANOCRYSTALS; SHELL; INP/ZNSE/ZNS; BRIGHT; CORE; BLUE; PHOSPHIDE; ELECTRON;
D O I
10.1088/1361-648X/ac858d
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
With the advancement toward commercialization of quantum dots (QDs) in the field of lighting and display, improving the performance of Cd-free QDs and related quantum dot light-emitting diodes (QLEDs) becomes necessary. Thus far, the performance of ZnTeSe- and InP-based blue and red QLEDs has been significantly improved by optimizing QDs emitting materials and device structure. However, as one of the three primary color sources, the performance of green InP-based QLEDs still lags behind that of blue and red Cd-free QLEDs. Herein, this review discusses the latest progress of green InP-based emitting materials and corresponding QLEDs, covering the engineering of InP core, the optimization of nanostructure and surface ligands of core/shell QDs, as well as the majorization of device architecture and carrier transport materials. Finally, some challenges and possible development directions of green InP-based QDs and related QLEDs are also identified, which may speed up the commercialization process of Cd-free QDs and corresponding QLEDs.
引用
收藏
页数:12
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