Mechanisms of enhanced radiation-induced degradation due to excess molecular hydrogen in bipolar oxides

被引：80

作者：

Chen, X. J. ^{[1
]}

Barnaby, H. J. ^{[1
]}

Vermeire, B. ^{[1
]}

Holbert, K. ^{[1
]}

Wright, D. ^{[1
]}

Pease, R. L. ^{[2
]}

Dunham, G. ^{[3
]}

Platteter, D. G. ^{[3
]}

Seiler, J. ^{[3
]}

McClure, S. ^{[4
]}

Adell, P. ^{[4
]}

机构：

[1] Arizona State Univ, Tempe, AZ 85287 USA

[2] RLP Res, Los Lunas, NM 87031 USA

[3] NAVSEA Crane, Crane, IN 47522 USA

[4] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 06期

关键词：

bipolar oxide; gated bipolar devices; hydrogen; interface traps; radiation-induced;

D O I：

10.1109/TNS.2007.909708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bipolar junction test structures packaged in hermetically sealed packages with excess molecular hydrogen (H-2) showed enhanced degradation after radiation exposure. Using chemical kinetics, we propose a model that quantitatively establishes the relationship between excess H-2 and radiation-induced interface trap formation. Using environments with different molecular hydrogen concentrations, radiation experiments were performed and the experimental data showed excellent agreement with the proposed model. The results, both experimentally and theoretically, showed increased radiation induced degradation with H-2 concentration, and device degradation saturate at both high and low ends of H-2 concentrations.

引用

页码：1913 / 1919

页数：7

共 35 条

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