Doping in 2D

被引：9

作者：

不详

机构：

来源：

NATURE ELECTRONICS | 2021年 / 4卷 / 10期

关键词：

D O I：

10.1038/s41928-021-00668-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ion implantation can be used to dope silicon devices, but can be problematic when applied to the atomically thin crystal structure of two-dimensional materials — an increasing range of alternative methods is though available.

引用

页码：699 / 699

页数：1

共 2 条

[1] Remote modulation doping in van der Waals heterostructure transistors [J].

Lee, Donghun ;

Lee, Jea Jung ;

Kim, Yoon Seok ;

Kim, Yeon Ho ;

Kim, Jong Chan ;

Huh, Woong ;

Lee, Jaeho ;

Park, Sungmin ;

Jeong, Hu Young ;

Kim, Young Duck ;

Lee, Chul-Ho .

NATURE ELECTRONICS, 2021, 4 (09) :664-670

[2] Reconfigurable photo-induced doping of two-dimensional van der Waals semiconductors using different photon energies [J].

Seo, Seung-Young ;

Moon, Gunho ;

Okello, Odongo F. N. ;

Park, Min Yeong ;

Han, Cheolhee ;

Cha, Soonyoung ;

Choi, Hyunyong ;

Yeom, Han Woong ;

Choi, Si-Young ;

Park, Jewook ;

Jo, Moon-Ho .

NATURE ELECTRONICS, 2021, 4 (01) :38-44

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