Multigroup equations to the hot-electron hot-phonon system in III-V compound semiconductors

被引：10
作者：
Galler, M [1 ]
Schürrer, F [1 ]
机构：
[1] Graz Tech Univ, Inst Theoret Phys, A-8010 Graz, Austria
来源：
COMPUTER METHODS IN APPLIED MECHANICS AND ENGINEERING | 2005年 / 194卷 / 25-26期
基金：
奥地利科学基金会;
关键词：
Boltzmann transport equations; polar semiconductor; multigroup approach; Rees effect;
D O I：
10.1016/j.cma.2004.07.027
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a fast, deterministic solution method for the coupled electron-phonon Boltzmann equations. This physically motivated, discrete model is used for studying the transport properties of GaAs in response to a time-depending external electric field. We especially point out the influence of the Rees effect. As for checking the reliability of our results, they are compared with Monte Carlo calculations for the same physical situation. The interesting steady state solutions of the electron distribution functions for the multivalley regime in GaAs are discussed. © 2004 Elsevier B.V. All rights reserved.
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页码：2806 / 2818
页数：13
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