Mobility Enhancement of Transparent IZO/GrRM Heterostructure via Graphene-Random-Mesh Carrier Pathways

被引：3

作者：

Shin, Yong Seon ^{[1
]}

Kang, Won Tae ^{[1
]}

Kim, Young Rae ^{[1
]}

Won, Ui Yeon ^{[1
]}

Lee, Ki Young ^{[2
]}

Heo, Jin Seong ^{[2
]}

Park, Seong Jun ^{[2
]}

Lee, Young Hee ^{[3
,4
]}

Yu, Woo Jong ^{[1
]}

机构：

[1] Sungkyunkwan Univ, SSGC, Dept Elect & Elect Engn, Suwon 440746, Gyeonggi Do, South Korea

[2] Samsung Adv Inst Technol, Suwon 443803, Gyeonggi Do, South Korea

[3] Sungkyunkwan Univ, Dept Phys, Dept Energy Sci, Inst Basic Sci, Suwon 440749, Gyeonggi Do, South Korea

[4] Sungkyunkwan Univ, IBS, Ctr Integrated Nanostruct Phys CINAP, Suwon 440749, Gyeonggi Do, South Korea

来源：

ADVANCED ELECTRONIC MATERIALS | 2016年 / 2卷 / 06期

关键词：

THIN-FILM TRANSISTORS; AMORPHOUS OXIDE SEMICONDUCTORS; SCHOTTKY-BARRIER; SOI MOSFETS; TEMPERATURE; DEVICE;

D O I：

10.1002/aelm.201500382

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Indium zinc oxide (IZO)/graphene random mesh (GrRM) heterostructures are proposed using GrRM not only to provide a highly conductive carrier pathway to enhance the mobility of IZO film but also to allow retention of the high on/off ratio in IZO and high transparency. The vacancies in GrRM act as series of tiny IZOs, which overcomes the large off-state leakage current in IZO/graphene.

引用

页数：5

共 3 条

[1] Enhancement of Mobility and Modulation of Carrier Concentration in Graphene Field-Effect Transistors via Molecular Doping
Xu, Lei
Ni, I-Chih
Chao, Yi-Ping
Jiang, Tian-Jing
Chen, Mei-Hsin
Wu, Chih-, I
ADVANCED MATERIALS INTERFACES, 2021, 8 (19):
[2] Modulating the band alignment, carrier mobility and optical absorption of graphene/MoS2 heterostructure via synergistic effects of doping and strain
Chen, Li-Yong
Sun, Tong
Zhang, Tian-Jun
Xie, You
Zhang, Jian-Min
SURFACES AND INTERFACES, 2024, 46
[3] Enhancement of hole mobility and carrier density in Ge quantum well of SiGe heterostructure via implementation of double-side modulation doping
Myronov, M.
Sawano, K.
Shiraki, Y.
APPLIED PHYSICS LETTERS, 2006, 88 (25)

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