Wideband, high-efficiency GaN power amplifiers utilizing a non-uniform distributed topology

被引：52

作者：

Gassmann, J. ^{[1
]}

Watson, P. ^{[1
]}

Kehias, L. ^{[1
]}

Henry, G. ^{[2
]}

机构：

[1] AF Res Lab, Wright Patterson AFB, OH 45433 USA

[2] Northrop Grumman Corp, Linthicum, MD 21090 USA

来源：

2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6 | 2007年

关键词：

distributed amplifiers; broadband amplifiers; power amplifiers; MMICs; phased arrays;

D O I：

10.1109/MWSYM.2007.379976

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A highly efficient, wideband power amplifier designed in GaN technology and utilizing a non-uniform distributed topology is reported in this paper. Measured results of an NGES fabricated NDPA demonstrate very high efficiency across the multi-octave bandwidth. Average CW output power and PAE across 2-15 GHz was 5.5 W and 25%, respectively. Maximum output power reached 6.9 W with 32% PAE at 7 GHz. A follow-on effort utilizing NGST's mmW foundry process was initiated in an attempt to achieve even higher efficiencies while compacting the size of the chip.

引用

页码：615 / 618

页数：4

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