Practical Consideration to Design Broadband X-Band Power Amplifiers: Comparative Results

A technology challenge is discussed and its solution is proposed for the design of 8.0 GHz to 10.0 GHz X-Band SOW GaN power amplifier. In the course of amplifier design, matching networks are constructed employing the real frequency techniques. In order to come with proper production technology, three amplifiers were considered with lumped elements, commensurate transmission lines, and with mixed lumped and distributed elements. It is deduced that lumped element broad X-Band power amplifier can be either built using discrete component technology or utilizing Microwave Monolithic Integrated Circuit technology. It turns out to be that mixed element amplifier can easily be built with discrete components which is relatively cheaper solution. Unfortunately, usage of commensurate transmission lines results in impractical characteristic impedance distributions which are not technically feasible to print as microstrip lines.